2SA1197

SKU: 2SA1197

2SA1197 Transistor Silicon PNP CASE: TO220 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO220
Manufacturer	Hitachi
Vbr CEO	60
Max. PD (W)	8.0
Min hFE	1.0k
Ic Max. (A)	1.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	1.0u
Mat.	Silicon Logic
Polarity	PNP
Tr Max. (s)	700n
t(stor) Max. (S)	800n+
Derate Above 25°C	64m
@VCE (test)	3.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	4-23
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	10 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	135 °C
Forward Current Transfer Ratio (hFE), MIN	3500
SKU	770235

Back