Weight |
0.01 kg
|
Type |
Transistor Silicon PNP |
Manufacturer |
Sanyo Semiconductor |
Case |
TO126 |
Vbr CBO |
180 |
Vbr CEO |
160 |
Max. PD (W) |
1.0 |
Min hFE |
250 |
Ic Max. (A) |
140m |
@Ic (test) (A) |
10m |
Icbo Max. @Vcb Max. (A) |
0.1u |
Polarity |
PNP |
Trans. Freq (Hz) Min. |
150M |
Oper. Temp (°C) Max. |
150 |
@VCE (V) |
5.0 |
Pinout Equivalence Number |
3-10 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
10 W |
Maximum Collector-Base Voltage |Vcb| |
180 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
0.14 A |
Max. Operating Junction Temperature (Tj) |
125 °C |
Collector Capacitance (Cc) |
4 pF |
Transition Frequency (ft): |
150 MHz |
Forward Current Transfer Ratio (hFE), MIN |
100 |
SKU |
80635 |