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2SA1211
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2SA1211

SKU: 2SA1211
2SA1211 Transistor Silicon PNP CASE: TO92S MAKE: Toshiba
Product specifications
Type Transistor Silicon PNP
Case TO92S
Manufacturer Toshiba
Vbr CBO 35
Vbr CEO 30
Max. PD (W) 200m
C(ob) (F) 2.5p
hfe 70
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
@VCE (test) (V) 12
Oper. Temp (°C) Max. 125
@Ic (A) 2.0m
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 2.5 pF
Transition Frequency (ft): 400 MHz
Forward Current Transfer Ratio (hFE), MIN 200
SKU 770217
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