2SA1217

SKU: 2SA1217

2SA1217 Transistor Silicon PNP CASE: TO126 MAKE: Toshiba

Datasheet

2SA1217 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO126
Manufacturer	Toshiba
Vbr CBO	40
Vbr CEO	40
Max. PD (W)	10
Derate (Amb) (W/°C)	80m
Max. hFE	240
Min hFE	80
Ic Max. (A)	3.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
Oper. Temp (°C) Max.	175
@VCE (V)	2.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	10 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	120 °C
Collector Capacitance (Cc)	35 pF
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	150
SKU	116337

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