| Weight |
0.01 kg
|
| Type |
Transistor Silicon PNP |
| Case |
SOT23 |
| Manufacturer |
NEC |
| Vbr CBO |
40 |
| Vbr CEO |
40 |
| Max. PD (W) |
200m |
| C(ob) (F) |
1.1p |
| Derate (Amb) (W/°C) |
2.5m |
| hfe |
90 |
| Ic Max. (A) |
30m |
| Icbo Max. @Vcb Max. (A) |
100n |
| Polarity |
PNP |
| Trans. Freq (Hz) Min. |
250M |
| @VCE (test) (V) |
10 |
| Oper. Temp (°C) Max. |
150 |
| @Ic (A) |
1.0m |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
YES |
| Maximum Collector Power Dissipation (Pc) |
0.2 W |
| Maximum Collector-Base Voltage |Vcb| |
30 V |
| Maximum Collector-Emitter Voltage |Vce| |
30 V |
| Maximum Collector Current |Ic max| |
0.025 A |
| Max. Operating Junction Temperature (Tj) |
135 °C |
| Collector Capacitance (Cc) |
6 pF |
| Transition Frequency (ft): |
400 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
25 |
| SMD Transistor Code |
E2_E3_E4 |
| SKU |
342922 |