| Type | SemiConductor | |
| Case | TO251 | |
| Manufacturer | Toshiba | |
| Vbr CBO | 50 | |
| Vbr CEO | 50 | |
| Max. PD (W) | 1.0 | |
| Derate (Amb) (W/°C) | 8.0m | |
| t(f) Max. (S) | 100n | |
| Max. hFE | 240 | |
| Min hFE | 120 | |
| Ic Max. (A) | 2.0 | |
| @Ic (test) (A) | 500m | |
| Icbo Max. @Vcb Max. (A) | 1.0u | |
| Tr Max. (s) | 100n | |
| Trans. Freq (Hz) Min. | 100M | |
| Oper. Temp (°C) Max. | 140 | |
| @VCE (V) | 2.0 | |
| Pinout Equivalence Number | 3-15 | |
| Surface Mounted Yes/No | NO | |
| SKU | 770180 | |