2SA1255

SKU: 2SA1255

2SA1255 Transistor Silicon PNP CASE: SOT23 MAKE: Toshiba

Datasheet

2SA1255 Datasheet

Product specifications

Weight	0.01 kg
Equivalent	2SA1255Y
Type	Transistor Silicon PNP
Case	SOT23
Manufacturer	Toshiba
Vbr CBO	200
Vbr CEO	200
Max. PD (W)	150m
C(ob) (F)	3.0p
Derate (Amb) (W/°C)	1.5m
hfe	120
Ic Max. (A)	50m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
Trans. Freq (Hz) Min.	100M
@VCE (test) (V)	3.0
Oper. Temp (°C) Max.	125
@Ic (A)	10n
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	200 V
Maximum Collector-Emitter Voltage \|Vce\|	200 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	7 pF
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	70
SKU	584999

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