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2SA1297
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2SA1297

SKU: 2SA1297
2SA1297 Transistor Silicon PNP CASE: TO92 MAKE: Toshiba
Datasheet
2SA1297 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO92
Manufacturer Toshiba
Vbr CBO 20
Vbr CEO 20
Max. PD (W) 400m
C(ob) (F) 40p
Derate (Amb) (W/°C) 3.2m
hfe 200
Ic Max. (A) 2.0
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 120M
@VCE (test) (V) 2.0
Oper. Temp (°C) Max. 150
@Ic (A) 100m
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 130 pF
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SKU 342935
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