2SA1306BO

SKU: 2SA1306BO

2SA1306BO Transistor Silicon PNP CASE: TO218 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO218
Manufacturer	Toshiba
Vbr CBO	200
Vbr CEO	200
Max. PD (W)	20#
Derate (Amb) (W/°C)	.16
Max. hFE	140
Min hFE	70
Ic Max. (A)	1.5
@Ic (test) (A)	100m
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	PNP
Trans. Freq (Hz) Min.	100M-
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	20 W
Maximum Collector-Base Voltage \|Vcb\|	200 V
Maximum Collector-Emitter Voltage \|Vce\|	200 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	1.5 A
Max. Operating Junction Temperature (Tj)	125 °C
Collector Capacitance (Cc)	30 pF
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	70
SKU	770077

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