2SA1307

SKU: 2SA1307

2SA1307 Transistor Silicon PNP CASE: SOT186 MAKE: Toshiba

Price:

£5.75 Inc. VAT (£4.79 Ex. VAT)

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Datasheet

2SA1307 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SOT186
Manufacturer	Toshiba
Vbr CBO	60
Vbr CEO	50
Max. PD (W)	20
Derate (Amb) (W/°C)	160m
Max. hFE	240
Min hFE	70
Ic Max. (A)	5.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	PNP
Tr Max. (s)	100n
Oper. Temp (°C) Max.	140
@VCE (V)	1.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	20 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	125 °C
Transition Frequency (ft):	60 MHz
Forward Current Transfer Ratio (hFE), MIN	70
SKU	80656

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