2SA1308

SKU: 2SA1308

2SA1308 Transistor Silicon PNP CASE: X104-1 MAKE: Toshiba

Datasheet

2SA1308 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	X104-1
Manufacturer	Toshiba
Vbr CBO	100
Vbr CEO	80
Max. PD (W)	30
Derate (Amb) (W/°C)	240m
t(f) Max. (S)	100n-
Max. hFE	240
Min hFE	70
Ic Max. (A)	5.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	PNP
Tr Max. (s)	200n-
Oper. Temp (°C) Max.	140
@VCE (V)	1.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	125 °C
Transition Frequency (ft):	60 MHz
Forward Current Transfer Ratio (hFE), MIN	120
SKU	342939

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