2SA1310

SKU: 2SA1310

2SA1310 Transistor Silicon PNP CASE: SOT33 MAKE: Matsushita Electronics

Datasheet

2SA1310 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SOT33
Manufacturer	Matsushita Electronics
Vbr CBO	60
Vbr CEO	55
Max. PD (W)	300m
Derate (Amb) (W/°C)	2.4m
hfe	180
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
Trans. Freq (Hz) Min.	80M
@VCE (test) (V)	5.0
Oper. Temp (°C) Max.	150
@Ic (A)	2.0m
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.3 W
Maximum Collector-Base Voltage \|Vcb\|	55 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	120 °C
Transition Frequency (ft):	120 MHz
Forward Current Transfer Ratio (hFE), MIN	120
SKU	342941

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