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2SA1311
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2SA1311

SKU: 2SA1311
2SA1311 Transistor Silicon PNP CASE: SOT23 MAKE: Toshiba
Product specifications
Type Transistor Silicon PNP
Case SOT23
Manufacturer Toshiba
Vbr CBO 50
Vbr CEO 50
Max. PD (W) 150m
C(ob) (F) 4.0p
Derate (Amb) (W/°C) 1.5m
hfe 200
Ic Max. (A) 150m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 80M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 125
@Ic (A) 2.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector Current |Ic max| 0.15 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SKU 585001
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