2SA1312

SKU: 2SA1312

2SA1312 Transistor Silicon PNP CASE: TO236 MAKE: Toshiba

Price:

£14.39 Inc. VAT (£11.99 Ex. VAT)

Qty

Datasheet

2SA1312 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO236
Manufacturer	Toshiba
Vbr CBO	120
Vbr CEO	120
Max. PD (W)	150m
C(ob) (F)	3.0p
Derate (Amb) (W/°C)	1.5m
hfe	400
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
Trans. Freq (Hz) Min.	100M
@VCE (test) (V)	6.0
Oper. Temp (°C) Max.	125
@Ic (A)	2.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	4 pF
Transition Frequency (ft):	110 MHz
Forward Current Transfer Ratio (hFE), MIN	200
SKU	342942

Back