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2SA1313O
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2SA1313O

SKU: 2SA1313O
2SA1313O Transistor Silicon PNP CASE: SOT23 MAKE: Toshiba
Product specifications
Equivalent 2SA1313
Type Transistor Silicon PNP
Case SOT23
Manufacturer Toshiba
Vbr CBO 50
Vbr CEO 50
Max. PD (W) 200m
C(ob) (F) 7.0p
Derate (Amb) (W/°C) 1.6m
hfe 120
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 150M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 150
@Ic (A) 100m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 13 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 585821
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