2SA1315

SKU: 2SA1315

2SA1315 Transistor Silicon PNP CASE: TO92 MAKE: Toshiba

Datasheet

2SA1315 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO92
Manufacturer	Toshiba
Vbr CBO	80
Vbr CEO	80
Max. PD (W)	900m
C(ob) (F)	45p
Derate (Amb) (W/°C)	7.2m
hfe	240
Ic Max. (A)	2.0
Icbo Max. @Vcb Max. (A)	7.0u
Polarity	PNP
Trans. Freq (Hz) Min.	80M
@VCE (test) (V)	2.0
Oper. Temp (°C) Max.	150
@Ic (A)	0.5
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.9 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	135 °C
Collector Capacitance (Cc)	45 pF
Transition Frequency (ft):	110 MHz
Forward Current Transfer Ratio (hFE), MIN	70
SKU	116348

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