The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SA1315O
View detailed images (12)

2SA1315O

SKU: 2SA1315O
2SA1315O Transistor Silicon PNP CASE: TO98 MAKE: Toshiba
Product specifications
Type Transistor Silicon PNP
Case TO98
Manufacturer Toshiba
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 900m
C(ob) (F) 45p
hfe 140=
Ic Max. (A) 2.0
Polarity PNP
Trans. Freq (Hz) Min. 80M
@VCE (test) (V) 2.0
@Ic (A) 500m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.9 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 135 °C
Collector Capacitance (Cc) 45 pF
Transition Frequency (ft): 110 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 592222
Back