| Type | Transistor Silicon PNP | |
| Case | SOT23 | |
| Manufacturer | Toshiba | |
| Vbr CBO | 50 | |
| Vbr CEO | 50 | |
| Max. PD (W) | 150m | |
| C(ob) (F) | 4.0p | |
| Derate (Amb) (W/°C) | 1.5m | |
| hfe | 70 | |
| Ic Max. (A) | 150m | |
| Icbo Max. @Vcb Max. (A) | 100n | |
| Polarity | PNP | |
| Trans. Freq (Hz) Min. | 80M | |
| @VCE (test) (V) | 6.0 | |
| Oper. Temp (°C) Max. | 125 | |
| @Ic (A) | 2.0m | |
| Pinout Equivalence Number | 3-14 | |
| Surface Mounted Yes/No | YES | |
| Maximum Collector Power Dissipation (Pc) | 0.4 W | |
| Maximum Collector-Base Voltage |Vcb| | 50 V | |
| Maximum Collector Current |Ic max| | 0.15 A | |
| Max. Operating Junction Temperature (Tj) | 125 °C | |
| Collector Capacitance (Cc) | 45 pF | |
| Transition Frequency (ft): | 80 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 90 | |
| SKU | 585003 | |