The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SA1327
View detailed images (12)

2SA1327

SKU: 2SA1327
2SA1327 Transistor Silicon PNP CASE: SOT186 MAKE: Toshiba
Datasheet
2SA1327 Datasheet
Product specifications
Equivalent 2SA1327Y
Type Transistor Silicon PNP
Case SOT186
Manufacturer Toshiba
Vbr CBO 50
Vbr CEO 20
Max. PD (W) 2.0
Derate (Amb) (W/°C) 16m
Max. hFE 320
Min hFE 160
Ic Max. (A) 10
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
Trans. Freq (Hz) Min. 45M
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 11 A
Max. Operating Junction Temperature (Tj) 120 °C
Collector Capacitance (Cc) 400 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 342947
Back