The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SA1358Y

2SA1358Y

SKU: 2SA1358Y
2SA1358Y Transistor Silicon PNP CASE: TO126F MAKE: Toshiba
Price:
£5.75 Inc. VAT (£4.79 Ex. VAT)
£5.75 Inc. VAT (£4.79 Ex. VAT)
Qty
  • 1 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Product specifications
Equivalent 2SA1358
Type Transistor Silicon PNP
Case TO126F
Manufacturer Toshiba
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 1.5
Derate (Amb) (W/°C) 12m
Max. hFE 240
Min hFE 120
Ic Max. (A) 1.0
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 120M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 30 pF
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SKU 394674
Back