2SA1360O

SKU: 2SA1360O

2SA1360O Transistor Silicon PNP CASE: TO126 MAKE: Toshiba

Price:

£4.79 Inc. VAT (£3.99 Ex. VAT)

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Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO126
Manufacturer	Toshiba
Vbr CBO	150
Vbr CEO	150
Max. PD (W)	1.2
Derate (Amb) (W/°C)	9.6m
Max. hFE	160
Min hFE	80
Ic Max. (A)	50m
@Ic (test) (A)	10m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
Trans. Freq (Hz) Min.	200M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	5 W
Maximum Collector-Base Voltage \|Vcb\|	150 V
Maximum Collector-Emitter Voltage \|Vce\|	150 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	135 °C
Collector Capacitance (Cc)	2.5 pF
Transition Frequency (ft):	200 MHz
Forward Current Transfer Ratio (hFE), MIN	70
SKU	394676

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