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2SA1379
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2SA1379

SKU: 2SA1379
2SA1379 Transistor Silicon PNP CASE: TO218 MAKE: Hitachi
Product specifications
Type Transistor Silicon PNP
Case TO218
Manufacturer Hitachi
Vbr CBO 600
Vbr CEO 600
Max. PD (W) 10
Derate (Amb) (W/°C) .08
Min hFE 60
Ic Max. (A) 800m
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 20u
Polarity PNP
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 4-23
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 600 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 120 °C
Forward Current Transfer Ratio (hFE), MIN 200
SKU 770015
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