2SA1416T-TD-E
View detailed images (5)

2SA1416T-TD-E

SKU: 2SA1416T-TD-E
2SA1416T-TD-E Semiconductor - Case: SOT23 Make: Renesas
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon PNP
Case SOT23
Manufacturer Renesas
Polarity PNP
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 13 pF
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN 200
SMD Transistor Code AB
SKU 1401714
Back