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2SA1612
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2SA1612

SKU: 2SA1612
2SA1612 Transistor Silicon PNP CASE: SOT323 MAKE: NEC
Datasheet
2SA1612 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT323
Manufacturer NEC
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 150m
C(ob) (F) 3.0p
hfe 100
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 50n
Polarity PNP
Trans. Freq (Hz) Min. 50M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 150
@Ic (A) 100u
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 90 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SMD Transistor Code C15_C16_C17_C18
SKU 343066
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