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2SA1737
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2SA1737

SKU: 2SA1737
2SA1737 Transistor Silicon PNP CASE: SOT89 MAKE: Matsushita Electronics
Datasheet
2SA1737 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT89
Manufacturer Matsushita Electronics
Vbr CBO 85
Vbr CEO 85
Max. PD (W) 1.0
Derate (Amb) (W/°C) 8.0m
Min hFE 60
Ic Max. (A) 50m
@Ic (test) (A) 10m
Icbo Max. @Vcb Max. (A) 10uϦ
Polarity PNP
Trans. Freq (Hz) Min. 200M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 85 V
Maximum Collector-Emitter Voltage |Vce| 85 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 125 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SMD Transistor Code 1E
SKU 343112
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