2SA2009
View detailed images (12)

2SA2009

SKU: 2SA2009
2SA2009 Transistor Silicon PNP CASE: SOT323 MAKE: Matsushita Electronics
Datasheet
2SA2009 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT323
Manufacturer Matsushita Electronics
Polarity PNP
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.02 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 180
SMD Transistor Code AR
SKU 343223
Back