| Type | Transistor Silicon PNP | |
| Case | SOT89 | |
| Manufacturer | Toshiba | |
| Polarity | PNP | |
| Maximum Collector Power Dissipation (Pc) | 1 W | |
| Maximum Collector-Base Voltage |Vcb| | 50 V | |
| Maximum Collector-Emitter Voltage |Vce| | 50 V | |
| Maximum Emitter-Base Voltage |Veb| | 7 V | |
| Maximum Collector Current |Ic max| | 2 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Collector Capacitance (Cc) | 20 pF | |
| Forward Current Transfer Ratio (hFE), MIN | 200 | |
| SMD Transistor Code | 4G | |
| SKU | 585035 | |