2SA277

SKU: 2SA277

2SA277 Transistor Germanium PNP CASE: TO5 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO5
Manufacturer	Toshiba
Vbr CBO	18
Vbr CEO	16
Max. PD (W)	65m
C(ob) (F)	10p
Derate (Amb) (W/°C)	1.2m
hfe	50
Ic Max. (A)	40m
Icbo Max. @Vcb Max. (A)	3.0u
Polarity	PNP
Trans. Freq (Hz) Min.	3.5M
@VCE (test) (V)	1.0
Oper. Temp (°C) Max.	75
@Ic (A)	24m
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.065 W
Maximum Collector-Base Voltage \|Vcb\|	18 V
Maximum Emitter-Base Voltage \|Veb\|	12 V
Maximum Collector Current \|Ic max\|	0.04 A
Max. Operating Junction Temperature (Tj)	75 °C
Collector Capacitance (Cc)	13 pF
Transition Frequency (ft):	2 MHz
Forward Current Transfer Ratio (hFE), MIN	50
SKU	584601

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