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2SA369
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2SA369

SKU: 2SA369
2SA369 Transistor Germanium PNP CASE: TO1 MAKE: Mitsubishi
Product specifications
Type Transistor Germanium PNP
Case TO1
Manufacturer Mitsubishi
Vbr CBO 20
Vbr CEO 20
Max. PD (W) 80m
C(ob) (F) 2.5p
Derate (Amb) (W/°C) 1.3m
hfe 80
Ic Max. (A) 10m
Icbo Max. @Vcb Max. (A) 15u
Polarity PNP
Trans. Freq (Hz) Min. 50.M
@VCE (test) (V) 9.0
Oper. Temp (°C) Max. 100
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.08 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 0.01 A
Max. Operating Junction Temperature (Tj) 85 °C
Collector Capacitance (Cc) 4 pF
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SKU 551967
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