| Weight |
0.01 kg
|
| Type |
Transistor Germanium PNP |
| Case |
TO1 |
| Manufacturer |
Mitsubishi |
| Vbr CBO |
20 |
| Vbr CEO |
20 |
| Max. PD (W) |
80m |
| C(ob) (F) |
2.5p |
| Derate (Amb) (W/°C) |
1.3m |
| hfe |
80 |
| Ic Max. (A) |
10m |
| Icbo Max. @Vcb Max. (A) |
15u |
| Polarity |
PNP |
| Trans. Freq (Hz) Min. |
50.M |
| @VCE (test) (V) |
9.0 |
| Oper. Temp (°C) Max. |
100 |
| @Ic (A) |
1.0m |
| Pinout Equivalence Number |
N/A |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.08 W |
| Maximum Collector-Base Voltage |Vcb| |
20 V |
| Maximum Collector-Emitter Voltage |Vce| |
20 V |
| Maximum Emitter-Base Voltage |Veb| |
1 V |
| Maximum Collector Current |Ic max| |
0.01 A |
| Max. Operating Junction Temperature (Tj) |
85 °C |
| Collector Capacitance (Cc) |
4 pF |
| Transition Frequency (ft): |
20 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
80 |
| SKU |
551967 |