2SA375

SKU: 2SA375

2SA375 Transistor Germanium PNP CASE: TO1 MAKE: Mitsubishi

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO1
Manufacturer	Mitsubishi
Vbr CBO	30
Vbr CEO	30
Max. PD (W)	80m
C(ob) (F)	2.5p
Derate (Amb) (W/°C)	1.3m
hfe	40
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	6.0u
Polarity	PNP
Trans. Freq (Hz) Min.	40.M
@VCE (test) (V)	1.0
Oper. Temp (°C) Max.	100
@Ic (A)	50m
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.08 W
Maximum Collector-Base Voltage \|Vcb\|	34 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	85 °C
Collector Capacitance (Cc)	4 pF
Transition Frequency (ft):	20 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	551968

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