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2SA39
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2SA39

SKU: 2SA39
2SA39 Transistor Germanium PNP CASE: TO1 MAKE: Toshiba
Product specifications
Type Transistor Germanium PNP
Case TO1
Manufacturer Toshiba
Vbr CBO 18
Max. PD (W) 25m
C(ob) (F) 11p
Derate (Amb) (W/°C) 500u
hfe 49
Ic Max. (A) 5.0m
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Trans. Freq (Hz) Min. 5.0M
@VCE (test) (V) 6.0i
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.025 W
Maximum Collector-Base Voltage |Vcb| 18 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 0.005 A
Max. Operating Junction Temperature (Tj) 75 °C
Collector Capacitance (Cc) 12 pF
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 768955
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