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2SA470
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2SA470

SKU: 2SA470
2SA470 Transistor Germanium PNP CASE: TO1 MAKE: Toshiba
Product specifications
Type Transistor Germanium PNP
Case TO1
Manufacturer Toshiba
Vbr CBO 18
Max. PD (W) 55m
C(ob) (F) 2.0p
Derate (Amb) (W/°C) 1.1m
hfe 75
Ic Max. (A) 10m
Icbo Max. @Vcb Max. (A) 12u
Polarity PNP
Trans. Freq (Hz) Min. 30.M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 100
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.055 W
Maximum Collector-Base Voltage |Vcb| 18 V
Maximum Collector Current |Ic max| 0.01 A
Max. Operating Junction Temperature (Tj) 85 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN 75
SKU 394738
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