2SA479

SKU: 2SA479

2SA479 Transistor Germanium PNP CASE: TO1 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO1
Manufacturer	Toshiba
Vbr CBO	40
Vbr CEO	40
Max. PD (W)	125m
C(ob) (F)	3.0p
Derate (Amb) (W/°C)	2.1m
hfe	60
Ic Max. (A)	200m
Icbo Max. @Vcb Max. (A)	8.0u
Polarity	PNP
Trans. Freq (Hz) Min.	40.M
@VCE (test) (V)	1.0
Oper. Temp (°C) Max.	100
@Ic (A)	200m
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.125 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	2 V
Maximum Collector Current \|Ic max\|	0.4 A
Max. Operating Junction Temperature (Tj)	85 °C
Collector Capacitance (Cc)	5 pF
Transition Frequency (ft):	20 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	584621

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