The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SA50
View detailed images (13)

2SA50

SKU: 2SA50
2SA50 Transistor Germanium PNP CASE: TO1 MAKE: Toshiba
Product specifications
Type Transistor Germanium PNP
Case TO1
Manufacturer Toshiba
Vbr CBO 18
Vbr CEO 18
Max. PD (W) 55m
C(ob) (F) 10p
Derate (Amb) (W/°C) 1.1m
hfe 70
Ic Max. (A) 24m
Icbo Max. @Vcb Max. (A) 15u
Polarity PNP
Trans. Freq (Hz) Min. 9.0M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 75
@Ic (A) 24m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.055 W
Maximum Collector-Base Voltage |Vcb| 18 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 0.024 A
Max. Operating Junction Temperature (Tj) 75 °C
Collector Capacitance (Cc) 13 pF
Transition Frequency (ft): 6 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 368839
Back