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2SA503G
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2SA503G

SKU: 2SA503G
2SA503G Transistor Silicon PNP CASE: TO39 MAKE: Generic
Product specifications
Equivalent 2SA503
Type Transistor Silicon PNP
Case TO39
Manufacturer Generic
Vbr CBO 60
Vbr CEO 50
Max. PD (W) 800m
C(ob) (F) 18p
Derate (Amb) (W/°C) 5.3m
hfe 30
Ic Max. (A) 600m
Icbo Max. @Vcb Max. (A) .50u
Polarity PNP
Trans. Freq (Hz) Min. 130M
@VCE (test) (V) 2.0
Oper. Temp (°C) Max. 175
@Ic (A) 150m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.6 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 30 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 1422259
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