The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SA510R
View detailed images (13)

2SA510R

SKU: 2SA510R
2SA510R Transistor Silicon PNP CASE: TO39 MAKE: Toshiba
Price:
£14.39 Inc. VAT (£11.99 Ex. VAT)
£14.39 Inc. VAT (£11.99 Ex. VAT)
Qty
Product specifications
Equivalent 2SA510
Type Transistor Silicon PNP
Case TO39
Manufacturer Toshiba
Vbr CBO 110
Vbr CEO 100
Max. PD (W) 800m
C(ob) (F) 60p
Derate (Amb) (W/°C) 6.4m
hfe 50
Ic Max. (A) 1.0
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
Trans. Freq (Hz) Min. 50M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 50m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 50 pF
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 585093
Back