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2SA511
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2SA511

SKU: 2SA511
2SA511 Transistor Silicon PNP CASE: TO39 MAKE: Toshiba
Product specifications
Type Transistor Silicon PNP
Case TO39
Manufacturer Toshiba
Vbr CBO 90
Vbr CEO 80
Max. PD (W) 800m
C(ob) (F) 60p
Derate (Amb) (W/°C) 6.4m
hfe 50
Ic Max. (A) 1.0
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
Trans. Freq (Hz) Min. 50M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 50m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 50 pF
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 116424
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