2SA516

SKU: 2SA516

2SA516 Transistor Silicon PNP CASE: TO5 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO5
Manufacturer	Toshiba
Vbr CBO	80
Vbr CEO	60
Max. PD (W)	800m
C(ob) (F)	43p
Derate (Amb) (W/°C)	5.3m
hfe	60
Ic Max. (A)	15
Icbo Max. @Vcb Max. (A)	50u
Polarity	PNP
Trans. Freq (Hz) Min.	50.M
@VCE (test) (V)	2.0
Oper. Temp (°C) Max.	175
@Ic (A)	200m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.8 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	1.5 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	60 pF
Transition Frequency (ft):	20 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	116427

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