| Weight |
0.01 kg
|
| Type |
Transistor Germanium PNP |
| Case |
TO1 |
| Manufacturer |
Toshiba |
| Vbr CBO |
18 |
| Max. PD (W) |
55m |
| C(ob) (F) |
1.6p |
| Derate (Amb) (W/°C) |
909u |
| Ic Max. (A) |
10m |
| Icbo Max. @Vcb Max. (A) |
10u |
| Polarity |
PNP |
| Trans. Freq (Hz) Min. |
45.M |
| Oper. Temp (°C) Max. |
100 |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.055 W |
| Maximum Collector-Base Voltage |Vcb| |
18 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
0.01 A |
| Max. Operating Junction Temperature (Tj) |
85 °C |
| Collector Capacitance (Cc) |
3 pF |
| Transition Frequency (ft): |
40 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
20 |
| SKU |
116429 |