2SA537A

SKU: 2SA537A

2SA537A Transistor Silicon PNP CASE: TO39 MAKE: Hitachi

Price:

£19.19 Inc. VAT (£15.99 Ex. VAT)

Qty

Datasheet

2SA537A Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO39
Manufacturer	Hitachi
Vbr CBO	90
Vbr CEO	80
Max. PD (W)	750m
Derate (Amb) (W/°C)	4.3m
hfe	80
Ic Max. (A)	700m
Polarity	PNP
Trans. Freq (Hz) Min.	200M
@VCE (test) (V)	4.0
Oper. Temp (°C) Max.	175
@Ic (A)	50m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.75 W
Maximum Collector-Base Voltage \|Vcb\|	90 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	0.7 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	20 pF
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	80
SKU	83518

Back