The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SA553
View detailed images (4)

2SA553

SKU: 2SA553
2SA553 Transistor Silicon PNP CASE: TO18 MAKE: Fujitsu
Product specifications
Type Transistor Silicon PNP
Case TO18
Manufacturer Fujitsu
Vbr CBO 40
Max. PD (W) 250m
C(ob) (F) 4.5p
Derate (Amb) (W/°C) 1.6m
hfe 60
Ic Max. (A) 300m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 175
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 116446
Back