2SA558

SKU: 2SA558

2SA558 Transistor Silicon PNP CASE: TO18 MAKE: Fujitsu

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO18
Manufacturer	Fujitsu
Vbr CBO	40
Vbr CEO	35
Max. PD (W)	350m
Derate (Amb) (W/°C)	2.3m
hfe	50
Ic Max. (A)	200m
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	PNP
@VCE (test) (V)	1.0
Oper. Temp (°C) Max.	175
@Ic (A)	10m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.35 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.2 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	8 pF
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	25
SKU	116451

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