Weight |
0.05 kg
|
Case |
TO66 |
Type |
Transistor |
Manufacturer |
Hitachi |
Vbr CBO |
100 |
Vbr CEO |
100 |
Max. PD (W) |
10 |
Derate (Amb) (W/°C) |
666m |
Max. hFE |
200 |
Min hFE |
35 |
Ic Max. (A) |
700m |
@Ic (test) (A) |
50m |
Polarity |
PNP |
R(sat) (Û) |
3.0 |
Trans. Freq (Hz) Min. |
100M |
Oper. Temp (°C) Max. |
175 |
@VCE (V) |
4.0 |
Pinout Equivalence Number |
3-14 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
10 W |
Maximum Collector-Base Voltage |Vcb| |
120 V |
Maximum Emitter-Base Voltage |Veb| |
4 V |
Maximum Collector Current |Ic max| |
0.7 A |
Max. Operating Junction Temperature (Tj) |
175 °C |
Collector Capacitance (Cc) |
30 pF |
Transition Frequency (ft): |
50 MHz |
Forward Current Transfer Ratio (hFE), MIN |
35 |
SKU |
116456 |