2SA566H

2SA566H

SKU: 2SA566H
2SA566H Transistor Silicon PNP CASE: TO66 MAKE: Hitachi
Product specifications
Type Transistor Silicon PNP
Case TO66
Manufacturer Hitachi
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 10
t(f) Max. (S) 250n+
Max. hFE 200
Min hFE 35
Ic Max. (A) 700m
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Tr Max. (s) 200n
R(sat) (Û) 3.0
Trans. Freq (Hz) Min. 100M
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.7 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 30 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 35
SKU 768804
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