2SA567

SKU: 2SA567

2SA567 Transistor Silicon PNP CASE: TO1 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO1
Manufacturer	Hitachi
Vbr CBO	30
Max. PD (W)	200m
hfe	300
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	500n
Polarity	PNP
Trans. Freq (Hz) Min.	100M
@VCE (test) (V)	6.0
@Ic (A)	1.0m
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.2 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	30 pF
Transition Frequency (ft):	50 MHz
Forward Current Transfer Ratio (hFE), MIN	300
SKU	116457

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