| Weight |
0.01 kg
|
| Type |
Transistor Silicon PNP |
| Case |
TO5 |
| Manufacturer |
NEC |
| Vbr CBO |
60 |
| Vbr CEO |
45 |
| Max. PD (W) |
800m |
| C(ob) (F) |
25p |
| Derate (Amb) (W/°C) |
5.6m |
| t(f) Max. (S) |
160n+ |
| hfe |
40 |
| Ic Max. (A) |
1.0 |
| Icbo Max. @Vcb Max. (A) |
100n |
| Polarity |
PNP |
| Tr Max. (s) |
40n |
| t(stor) Max. (S) |
130n+ |
| Trans. Freq (Hz) Min. |
200M |
| @VCE (test) (V) |
10 |
| Oper. Temp (°C) Max. |
175 |
| @Ic (A) |
50m |
| Pinout Equivalence Number |
N/A |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.8 W |
| Maximum Collector-Base Voltage |Vcb| |
60 V |
| Maximum Collector-Emitter Voltage |Vce| |
45 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
1 A |
| Max. Operating Junction Temperature (Tj) |
175 °C |
| Collector Capacitance (Cc) |
25 pF |
| Transition Frequency (ft): |
200 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
40 |
| SKU |
116461 |