2SA605

SKU: 2SA605

2SA605 Transistor Silicon PNP CASE: TO18 MAKE: NEC

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO18
Manufacturer	NEC
Vbr CBO	180
Vbr CEO	160
Max. PD (W)	300m
C(ob) (F)	5.0p
Derate (Amb) (W/°C)	2.4m
hfe	50
Ic Max. (A)	50m
Icbo Max. @Vcb Max. (A)	50n
Polarity	PNP
Trans. Freq (Hz) Min.	100M
@VCE (test) (V)	3.0
Oper. Temp (°C) Max.	175
@Ic (A)	1.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.3 W
Maximum Collector-Base Voltage \|Vcb\|	180 V
Maximum Collector-Emitter Voltage \|Vce\|	140 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	165 °C
Collector Capacitance (Cc)	5 pF
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	50
SKU	556247

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