2SA623

SKU: 2SA623

2SA623 Transistor Silicon PNP CASE: TO220 MAKE: Mitsubishi

Datasheet

2SA623 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO220
Manufacturer	Mitsubishi
Vbr CBO	35
Vbr CEO	20
Max. PD (W)	7.0
Derate (Amb) (W/°C)	70m
t(f) Max. (S)	800n+
Max. hFE	300
Min hFE	35
Ic Max. (A)	1.5
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	1.0
Polarity	PNP
Tr Max. (s)	200n
R(sat) (Û)	1.0
Trans. Freq (Hz) Min.	70M
Oper. Temp (°C) Max.	125
@VCE (V)	4.0
Pinout Equivalence Number	4-27
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	7 W
Maximum Collector-Base Voltage \|Vcb\|	35 V
Maximum Collector-Emitter Voltage \|Vce\|	20 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	1.5 A
Max. Operating Junction Temperature (Tj)	125 °C
Transition Frequency (ft):	30 MHz
Forward Current Transfer Ratio (hFE), MIN	35
SKU	343255

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