2SA629

2SA629

SKU: 2SA629
2SA629 Transistor Silicon PNP CASE: TO92 MAKE: Mitsubishi
Product specifications
Type Transistor Silicon PNP
Case TO92
Manufacturer Mitsubishi
Vbr CBO 30
Vbr CEO 25
Max. PD (W) 150m
Derate (Amb) (W/°C) 1.5m
hfe 200
Ic Max. (A) 30m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
Trans. Freq (Hz) Min. 100M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 125
@Ic (A) 1.0m
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 200
SKU 551971
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