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2SA636A
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2SA636A

SKU: 2SA636A
2SA636A Transistor Silicon PNP CASE: TO202 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO202
Manufacturer Unknow
Vbr CBO 70
Vbr CEO 60
Max. PD (W) 10
Derate (Amb) (W/°C) 80m
Max. hFE 250
Min hFE 40
Ic Max. (A) 5.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
R(sat) (Û) 1.3
Trans. Freq (Hz) Min. 40M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 70 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 60 pF
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 768768
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